Resonant x-ray diffraction measurements in charge ordered kagome superconductors KV3Sb5and RbV3Sb5.

We report on (resonant) x-ray diffraction experiments on the normal state properties of kagome-lattice superconductors KV3Sb5and RbV3Sb5. We have confirmed previous reports indicating that the charge density wave (CDW) phase is characterized by a doubling of the unit cell in all three crystallographic directions. By monitoring the temperature dependence of Bragg peaks associated with the CDW phase, we ascertained that it develops gradually over several degrees, as opposed to CsV3Sb5, where the CDW peak intensity saturates promptly just below the CDW transition temperature. Analysis of symmetry modes indicates that this behavior arises due to lattice distortions linked to the formation of CDWs. These distortions occur abruptly in CsV3Sb5, while they progress more gradually in RbV3Sb5and KV3Sb5. In contrast, the amplitude of the mode leading to the crystallographic symmetry breaking fromP6/mmmtoFmmmappears to develop more gradually in CsV3Sb5as well. Diffraction measurements close to the V K edge and the Sb L1edge show no sensitivity to inversion- or time-symmetry breaking, which are claimed to be associated with the onset of the CDW phase. The azimuthal angle dependence of the resonant diffraction intensity observed at the Sb L1edge is associated with the difference in the population of unoccupied states and the anisotropy of the electron density of certain Sb ions.

Crystal Growth, Structural Transition, and Magnetic Properties of Ho5Pd4Sn12.

Single crystals and polycrystalline samples of Ho5Pd4Sn12 have been synthesized using flux and arc-melting methods, respectively. Single-crystal X-ray diffraction studies indicate that Ho5Pd4Sn12 crystallizes in a tetragonal structure (I4/m) at room temperature and transforms into a monoclinic structure (C2/m) below ∼194 K. This structural transition is further supported by a transmission electron microscopy study and an anomaly at ∼194 K in the specific heat data. Temperature-dependent resistivity data also show a kink around the structural transition temperature. Ho5Pd4Sn12 is antiferromagnetically ordered below 7 K. Ho5Pd4Sn12 shows magnetic anisotropy, and the isothermal magnetization curve (H⊥c) at 2 K exhibits a field-induced magnetic phase transition around 22.8 kOe.

Author Correction: Universal mechanical exfoliation of large-area 2D crystals.

An amendment to this paper has been published and can be accessed via a link at the top of the paper.

Universal mechanical exfoliation of large-area 2D crystals.

Two-dimensional materials provide extraordinary opportunities for exploring phenomena arising in atomically thin crystals. Beginning with the first isolation of graphene, mechanical exfoliation has been a key to provide high-quality two-dimensional materials, but despite improvements it is still limited in yield, lateral size and contamination. Here we introduce a contamination-free, one-step and universal Au-assisted mechanical exfoliation method and demonstrate its effectiveness by isolating 40 types of single-crystalline monolayers, including elemental two-dimensional crystals, metal-dichalcogenides, magnets and superconductors. Most of them are of millimeter-size and high-quality, as shown by transfer-free measurements of electron microscopy, photo spectroscopies and electrical transport. Large suspended two-dimensional crystals and heterojunctions were also prepared with high-yield. Enhanced adhesion between the crystals and the substrates enables such efficient exfoliation, for which we identify a gold-assisted exfoliation method that underpins a universal route for producing large-area monolayers and thus supports studies of fundamental properties and potential application of two-dimensional materials.

Experimental evidence of anomalously large superconducting gap on topological surface state of ß-Bi2Pd film.

Connate topological superconductor (TSC) combines topological surface states with nodeless superconductivity in a single material, achieving effective p-wave pairing without interface complication. By combining angle-resolved photoemission spectroscopy and in-situ molecular beam epitaxy, we studied the momentum-resolved superconductivity in ß-Bi2Pd film. We found that the superconducting gap of topological surface state (ΔTSS ∼ 3.8 meV) is anomalously enhanced from its bulk value (Δb ∼ 0.8 meV). The ratio of 2ΔTSS/kBTc ∼ 16.3, is substantially larger than the BCS value. By measuring ß-Bi2Pd bulk single crystal as a comparison, we clearly observed the upward-shift of chemical potential in the film. In addition, a concomitant increasing of surface weight on the topological surface state was revealed by our first principle calculation, suggesting that the Dirac-fermion-mediated parity mixing may cause this anomalous superconducting enhancement. Our results establish ß-Bi2Pd film as a unique case of connate TSCs with a highly enhanced topological superconducting gap, which may stabilize Majorana zero modes at a higher temperature.

Observation of topological states residing at step edges of WTe2.

Topological states emerge at the boundary of solids as a consequence of the nontrivial topology of the bulk. Recently, theory predicts a topological edge state on single layer transition metal dichalcogenides with 1T' structure. However, its existence still lacks experimental proof. Here, we report the direct observations of the topological states at the step edge of WTe2 by spectroscopic-imaging scanning tunneling microscopy. A one-dimensional electronic state residing at the step edge of WTe2 is observed, which exhibits remarkable robustness against edge imperfections. First principles calculations rigorously verify the edge state has a topological origin, and its topological nature is unaffected by the presence of the substrate. Our study supports the existence of topological edge states in 1T'-WTe2, which may envision in-depth study of its topological physics and device applications.Two-dimensional topological insulators support edge conduction electrons but its realization in real materials is rare. Here, Peng et al. report the direct observation of topological states at the step edge of WTe2.

Epitaxial Growth and Air-Stability of Monolayer Antimonene on PdTe2.

Monolayer antimonene is fabricated on PdTe2 by an epitaxial method. Monolayer antimonene is theoretically predicted to have a large bandgap for nanoelectronic devices. Air-exposure experiments indicate amazing chemical stability, which is great for device fabrication. A method to fabricate high-quality monolayer antimonene with several great properties for novel electronic and optoelectronic applications is provided.